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NIKUNJ'SNANOTECHRequest a quote ↗2 nm High-NA EUV Lithography R&D Programme
Engineering the future of semiconductor manufacturing.
Research and development of a next-generation High-Numerical-Aperture Extreme Ultraviolet lithography platform for 2 nm and sub-2 nm semiconductor manufacturing.
Advancing towards the Angstrom era
A national-scale engineering challenge.
Semiconductor manufacturing at the 2 nm generation requires one of the most complex engineering platforms ever created. Conventional optical lithography cannot efficiently print the most critical features required by advanced logic and memory devices.
High-NA EUV uses 13.5 nm extreme-ultraviolet light and reflective optics with approximately 0.55 numerical aperture. Current systems target approximately 8 nm optical resolution and support 2 nm and sub-2 nm process generations.
The programme is envisioned as a long-term national and industrial initiative involving scientists, universities, manufacturers, precision-engineering companies, materials developers and government institutions.
Programme direction
Key technology indicators.
Programme-level targets requiring research, prototyping and qualification.
Target semiconductor generation2 nm and sub-2 nm logic
EUV wavelength13.5 nm
Optical architectureReflective multilayer-mirror system
Numerical apertureHigh-NA, approximately 0.55
Target optical resolutionApproximately 8 nm class
Wafer platform300 mm silicon wafer
Exposure environmentUltra-high vacuum
Patterning approachSingle exposure where technically and economically feasible
Mature production objectiveMore than 200 wafers per hour
Primary applicationsAdvanced logic, AI, HPC, memory and quantum devices
Why it matters
Capability with strategic impact.
Advanced computing
Enable denser, more efficient processors for AI, HPC, data centres and communications.
Scientific innovation
Unite plasma physics, optics, photochemistry, nanotechnology, mechatronics, materials, vacuum, software and AI.
Industrial ecosystem
Create demand for precision manufacturing, specialty materials, sensors, lasers, robotics, electronics and software.
Establish a globally competitive research and industrial ecosystem for next-generation lithography.
- Develop stable 13.5 nm EUV generation
- Build atomic-precision reflective optics
- Create nanometre-accurate wafer and reticle stages
- Advance masks, pellicles, resists and underlayers
- Develop computational lithography and metrology
- Integrate subsystems toward fab qualification
Understanding EUV
How the technology works.
Extreme-ultraviolet radiation behaves differently from visible and deep-ultraviolet light, changing the architecture of the entire machine.
Generate light
Microscopic molten-tin droplets are reshaped by a pre-pulse and struck by a powerful CO₂ laser. The hot plasma emits radiation; a collector captures energy around 13.5 nm. Commercial sources repeat this process up to roughly 50,000 times per second.
Guide with mirrors
EUV is absorbed by air and most materials. The exposure therefore operates in vacuum and uses multilayer reflective mirrors rather than conventional glass lenses.
Pattern the wafer
A reflective mask carries an enlarged circuit pattern. Projection optics reduce and image it onto photoresist-coated silicon; development and etching transfer the pattern.
Increase numerical aperture
Resolution broadly follows CD = k₁λ / NA. Raising NA from 0.33 to approximately 0.55 improves resolution and image contrast toward the 8 nm class.
Core system architecture
Nine interdependent R&D domains.
EUV light source
Stable, high-power 13.5 nm radiation generated through laser-produced plasma.
Research priorities
- High-frequency molten-tin droplets
- Droplet imaging and trajectory control
- Pre-pulse and CO₂ main-pulse synchronization
- Plasma conversion efficiency
- Collector protection and tin-debris mitigation
- Source stability, thermal management and calibration
Major challenge
Strike microscopic droplets thousands of times per second while protecting collector optics and maintaining usable light intensity, efficiency, availability and lifetime.
High-NA reflective optics
Atomic-precision multilayer mirrors replace refractive lenses throughout the EUV optical path.
Research priorities
- Molybdenum-silicon multilayer coatings
- Atomic-level polishing and aspherical fabrication
- High-NA anamorphic projection optics
- Wavefront-error measurement
- Contamination and thermal-deformation control
- Actuated alignment and reflectivity optimization
Major challenge
Commercial-scale High-NA optical systems contain tens of thousands of precision parts and require extraordinary manufacturing, alignment and metrology capability.
Reflective masks & pellicles
Low-defect reflective masks carry the circuit pattern while pellicles protect them in the exposure environment.
Research priorities
- Low-defect mask substrates
- Multilayer reflective coatings
- EUV absorber-pattern development
- Mask blank and actinic inspection
- Defect repair
- High-transmission, thermally stable pellicles
- Mask cleaning, handling and storage
Major challenge
Maintain pattern fidelity, reflectivity and protection under EUV exposure without introducing printable defects.
Wafer & reticle stages
High-speed synchronized motion with nanometre-scale positional control.
Research priorities
- Precision guided stages and linear motors
- Interferometric position measurement
- Vibration isolation
- Real-time trajectory correction
- Reticle-wafer synchronization
- Thermal expansion compensation
- Dual-stage handling and acceleration control
Major challenge
Move wafer and reticle rapidly while preserving focus, overlay and settling accuracy.
Vacuum & contamination control
The complete optical path operates in vacuum because air absorbs EUV radiation.
Research priorities
- Multi-zone vacuum chambers and pumps
- Hydrogen-based contamination mitigation
- Molecular and particle monitoring
- Outgassing qualification
- Vacuum-compatible materials
- Load locks and transfer robotics
- Emergency isolation
Major challenge
Control molecular contamination, particles and outgassing across a complex serviceable machine.
Photoresist & process materials
EUV-sensitive material systems must balance resolution, sensitivity, roughness and defectivity.
Research priorities
- Chemically amplified and metal-oxide resists
- Low-dose, high-sensitivity materials
- Line-edge roughness reduction
- Stochastic-defect control
- Outgassing control
- Advanced underlayers and bake optimization
- Pattern-collapse prevention
- Dry and molecular resists
Major challenge
Improving resolution, sensitivity or roughness can negatively affect the other parameters.
Metrology & inspection
Development depends on measurement systems capable of verifying every critical subsystem and process result.
Research priorities
- CD scanning electron microscopy
- E-beam defect inspection
- Atomic-force microscopy
- Scatterometry and interferometry
- Overlay and wavefront metrology
- Mask and particle inspection
- Film thickness and surface roughness
- Computational defect classification
Major challenge
Measurement capability must advance alongside the exposure platform.
Computational lithography
Software compensates for optical and process limitations and improves pattern fidelity.
Research priorities
- Optical proximity correction
- Inverse lithography technology
- Source-mask optimization
- Mask-rule checking
- Resist and etch-bias modelling
- Placement and overlay correction
- Digital twins and predictive maintenance
- AI-assisted defect classification
Major challenge
Connect accurate physical models with manufacturable masks, process control and production-scale computation.
Integrated control platform
A deterministic, fault-tolerant real-time architecture coordinates the complete machine.
Research priorities
- Source, droplet and laser timing
- Mirror alignment and stage motion
- Focus, levelling and vacuum
- Wafer and reticle handling
- Temperature and process recipes
- Safety interlocks
- Equipment-health monitoring
Major challenge
Safety-critical controls must remain separated from higher-level AI optimization functions.
Execution framework
Sixteen work packages.
Subsystem research progresses toward an integrated exposure demonstrator and repeatable 300 mm wafer processing.
PackageDomainMain deliverable
WP-01EUV plasma physics
Stable laboratory EUV-emission source
WP-02Droplet generator
Controlled high-frequency tin-droplet stream
WP-03High-power laser
Synchronized pre-pulse and main-pulse system
WP-04Collector optics
EUV collector with debris protection
WP-05Multilayer coatings
High-reflectivity 13.5 nm mirror coatings
WP-06Projection optics
High-NA laboratory optical column
WP-07Mask technology
Reflective masks, inspection and repair
WP-08Pellicle technology
Thermally stable EUV pellicle
WP-09Resist materials
Low-defect EUV-sensitive materials
WP-10Precision stages
Nanometre-scale wafer and reticle stages
WP-11Vacuum engineering
Contamination-controlled vacuum platform
WP-12Metrology
Overlay, CD and defect-measurement systems
WP-13Computational lithography
OPC, ILT and process-modelling software
WP-14Machine controls
Synchronized real-time control system
WP-15System integration
Integrated exposure demonstrator
WP-16Pilot qualification
Repeatable 300 mm wafer processing
15–25 year programme
Development roadmap.
A complete commercial EUV machine is a national-scale programme. Acceleration requires extensive cooperation, technology access and sustained public-private investment.
Foundation & consortium
- Programme governance and scientific leadership
- Academic and industrial partner network
- Initial plasma, coating and vacuum laboratories
- System requirements and reference architecture
- Patent, freedom-to-operate and workforce programmes
Subsystem research
- Low-power 13.5 nm source demonstration
- Tin-droplet and multilayer-coating prototypes
- Laboratory mirror metrology
- Resist, mask, stage and vacuum programmes
- Initial computational-lithography platform
Static exposure demonstrator
- Integrate source, collector and simplified optics
- Pattern test wafers
- Characterize resolution, dose and defects
- Establish mask and resist process loops
- Improve debris and contamination control
Alpha scanner
- Scanning wafer and reticle stages
- Advanced projection optics
- 300 mm wafer handling
- Automatic alignment, focus and levelling
- Repeatable multi-field exposure and overlay optimization
Beta & pilot line
- Improve source power and uptime
- Reduce stochastic defects
- Increase throughput
- Demonstrate multi-layer structures
- Install beta systems and collect reliability data
Industrial qualification
- Production-level availability
- Qualify critical 2 nm and sub-2 nm layers
- Manufacturing and service supply chains
- Spare-part, calibration and field support
- Customer and regulatory qualification
Research infrastructure
Facilities built for atomic-scale control.
Core laboratories
- EUV plasma source
- High-power laser
- Ultra-high vacuum
- Thin-film and multilayer coating
- Ultra-precision optics
- Optical metrology
- Mask fabrication and inspection
- Photoresist chemistry
- Precision mechatronics
- Semiconductor processing
- Computational lithography
- Reliability and environmental testing
Cleanroom & utilities
- Class 1/Class 10 critical areas
- 300 mm wafer processing
- Molecular contamination control
- Temperature, humidity and vibration stability
- EMI control
- High-purity gases and ultra-pure water
- Chemical handling and abatement
- Redundant power and cooling
Supporting equipment
- E-beam writing and inspection
- SEM and AFM systems
- Ion-beam figuring
- Interferometers and spectrometers
- Thin-film deposition
- Etch and coat/develop tracks
- Coordinate measurement
- High-performance computing clusters
Multidisciplinary team
Thousands of specialists. One integrated mission.
A mature programme may require several thousand direct researchers and engineers plus a much larger supplier and academic ecosystem.
Scientific
- Plasma and optical physicists
- Laser and material scientists
- Photochemists and surface scientists
- Vacuum scientists
- Semiconductor process engineers
- Computational imaging researchers
Engineering
- Precision mechanical and mechatronics
- Control, electrical and power
- Embedded systems and robotics
- Thermal and reliability
- Cleanroom and facilities
- Systems integration
Software
- Real-time software
- Computational lithography
- Digital twins
- Machine learning and computer vision
- Equipment automation
- Cybersecurity and data platforms
Programme
- Systems engineering and programme management
- Supplier development and quality assurance
- Semiconductor IP and patent law
- Export-control compliance
- Environmental health and safety
- Technology commercialization
Verified progress
Technical success criteria.
Performance must be demonstrated through measurable, repeatable indicators—not aspiration alone.
EUV sourcePower, stability, conversion efficiency and uptime
ImagingResolution, contrast and process window
OpticsWavefront error, reflectivity and contamination rate
OverlayLayer-to-layer placement accuracy
StagesPosition accuracy, speed, vibration and settling time
MaskDefect density, reflectivity and pattern fidelity
ResistDose, roughness, sensitivity and stochastic defects
Wafer outputWafers exposed per hour
ReliabilityAvailability, MTBF and recovery time
ProcessYield, CD uniformity and edge placement
SustainabilityEnergy, water, chemical and material consumption
Global status · July 2026
High-NA EUV exists—and continues to advance.
Commercial High-NA platforms use 13.5 nm light and approximately 0.55 NA for 2 nm, sub-2 nm logic and advanced memory.
Imec has demonstrated single-exposure High-NA patterning and installed advanced sub-2 nm R&D capability. ASML and Intel announced use of High-NA EUV for selected Intel 18A product layers in high-volume manufacturing.
The programme therefore focuses on indigenous, collaborative and specialized capabilities within the global High-NA EUV ecosystem—not on claiming the technology does not exist.
Applications
Computing platforms enabled by advanced patterning.
AI
AI
High-density processors and accelerators for large models, machine vision and intelligent automation.
HPC
HPC
Advanced CPUs, GPUs and custom accelerators for scientific modelling and engineering.
DAT
Data centres
More computing performance per unit area and potentially better chip-level energy efficiency.
ADV
Advanced memory
High-density DRAM and future memory architectures requiring precise patterning.
TEL
Telecommunications
Processors and RF control devices for advanced communication infrastructure.
AUT
Automotive & aerospace
Compute for autonomous systems, simulation, navigation and sensor fusion.
STR
Strategic electronics
Domestic capabilities for critical systems, subject to applicable laws and export controls.
QUA
Quantum technology
Advanced patterning pathways for selected quantum-device fabrication.
Building a collaborative ecosystem
No single institution can build every component alone.
We invite participation from across research, manufacturing, precision engineering, materials, software, finance and public institutions.
Partnership models
- Joint research programmes
- Sponsored research laboratories
- Technology-development agreements
- Academic grants and doctoral fellowships
- Supplier-development programmes
- IP licensing
- Pilot-line participation
- International scientific collaboration
- Strategic public-private investment
Join the mission
Work on some of engineering’s most demanding challenges.
We are building an ecosystem where physicists, engineers, material scientists and software professionals work across plasma and source research, lasers, optics, coatings, semiconductor processes, vacuum, mechatronics, computation, metrology, AI, systems engineering and supplier development.
Responsible development
Performance must include resource efficiency.
EUV scanners require substantial power, cooling and infrastructure, but can reduce patterning, deposition and etching steps compared with complex DUV multi-patterning.
- Higher source efficiency
- Reduced power per wafer
- Heat recovery
- Energy-efficient vacuum systems
- Reduced process chemicals
- Water recycling
- Longer optical-component lifetime
- Recyclable tin and process materials
- Predictive maintenance
- Responsible hazardous-material disposal
Knowledge centre
Frequently asked questions.
Does a 2 nm chip contain features exactly 2 nm wide?
Not necessarily. “2 nm” is a process-generation designation; physical dimensions vary by architecture, layer and manufacturer.
Does a 2 nm lithography machine use 2 nm light?
No. EUV lithography uses approximately 13.5 nm light. High-NA optics, masks, resists and computation enable advanced process generations.
Why are mirrors used instead of lenses?
EUV radiation is absorbed by conventional lens materials, so specialized multilayer mirrors reflect and guide it.
Why must the system operate in vacuum?
Air absorbs EUV radiation; a controlled vacuum is required throughout the optical path.
Can one organization develop a complete EUV machine?
A viable platform requires a broad ecosystem of research institutions, suppliers, manufacturers and government agencies.
How long can development take?
A complete indigenous platform may require 15–25 years, while individual subsystems and useful research capabilities can emerge earlier.
Can an EUV machine alone manufacture a 2 nm chip?
No. A fab also needs deposition, etching, implantation, cleaning, metrology, inspection, packaging, process integration and chip-design technology.
Is High-NA EUV already being used?
Yes. High-NA systems are in advanced R&D and early production use; this programme focuses on indigenous, collaborative and specialized ecosystem capabilities.
Technical enquiry
Partner with us to build the next generation.
Discuss research collaboration, subsystem development, academic participation, supplier capability or strategic investment.